A periodic index separate confinement heterostructure quantum well laser
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چکیده
Articles you may be interested in Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy Appl. Temperature modulation molecularbeam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantumwell lasers Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy Appl. Hightemperature operation of periodic index separate confinement heterostructure quantum well laser Appl. Analysis and optimization of gradedindex separateconfinement heterostructure waveguides for quantum well lasers
منابع مشابه
Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy
Articles you may be interested in Temperature modulation molecularbeam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantumwell lasers Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy Appl. Very low threshold single quantum well gradedindex separate...
متن کاملPeriodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy
Organometallic vapor phase epitaxy was used to grow a novel periodic index separate confinement heterostructure (PINSCH) InGaAs/AlGaAs multiple quantum well (MQW) laser. Secondary ion mass spectrometry and transmission electron microscopy were used to characterize the structure. The performance of the PINSCH laser was compared with that of a graded index separate confinement heterostructure (GR...
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We have used solid-source molecular beam epitaxy (MBE) to grow InGaAs quantumwell lasers emitting at 980nm in a novel configuration of periodic index separate confinement heterostructure (PINSCH). Periodic multilayers (GaAs/A1GaAs) are utilized as optical confinement layers to reduce the transverse beam divergence as well as to increase the maximum output power. The multilayers are grown by tem...
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Today, electron leakage in InP-based separate confinement laser diode has a serious effect on device performance. Control of electron leakage current is the aim of many studies in semiconductor laser industry. In this study, for the first time, a new asymmetric waveguide structure with n-interlayer for a 1.325 μm InP-based laser diode with InGaAsP multi-quantum well is proposed and theoreticall...
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We report the operation of a photopumped blue Znx8Cdy8Mg12x82y8Se/ZnxCdyMg12x2ySe separate confinement heterostructure single quantum well laser grown lattice matched to InP with a relatively thick quaternary quantum well ~;50 Å!. Laser emission at 492 nm in the blue was observed. The lasing linewidth is about 5 nm. Based on the temperature dependency of the threshold pumping intensity, the cha...
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